Rf discharge dissociative mode in NF3 and SiH4

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dc.contributor.authorLisovskiy, V.
dc.contributor.authorBooth, Jean-Paul
dc.contributor.authorLandry, K.
dc.contributor.authorDouai, D.
dc.contributor.authorCassagne, V.
dc.contributor.authorYegorenkov, V.
dc.date.accessioned2010-11-17T19:42:26Z
dc.date.available2010-11-17T19:42:26Z
dc.date.issued2007-10
dc.description.abstractThis paper shows that the rf capacitive discharge in NF3 and SiH4 can burn in three possible modes: weak-current α-mode, strong-current γ -mode and dissociative δ -mode. This new dissociative δ-mode is characterized by a high dissociation degree of gas molecules (actually up to 100% in NF3 and up to 70% in SiH4), higher resistivity and a large discharge current. On increasing rf voltage first we may observe a weak-current α-mode (at low NF3 pressure the α-mode is absent). At rather high rf voltage when a sufficiently large number of high energy electrons appear in the discharge, an intense dissociation of gas molecules via electron impact begins, and the discharge experiences a transition to the dissociative δ-mode. The dissociation products of NF3 and SiH4 molecules possess lower ionization potentials, and they form an easily ionized admixture to the main gas. At higher rf voltages when near-electrode sheaths are broken down, the discharge experiences a transition to the strong-current γ -mode.en
dc.description.sponsorship-en
dc.identifier.citationJ. Phys. D: Appl. Phys. 40 (2007) 6631–6640en
dc.identifier.urihttps://ekhnuir.karazin.ua/handle/123456789/1700
dc.language.isoenen
dc.publisherJOURNAL OF PHYSICS D: APPLIED PHYSICSen
dc.relation.ispartofseries;doi:10.1088/0022-3727/40/21/023
dc.subjectplasma physicsen
dc.subjectgas dischargesen
dc.titleRf discharge dissociative mode in NF3 and SiH4en
dc.typeArticleen

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Наукові роботи. Навчально-науковий інститут "Фізико-технічний факультет"