Rf discharge dissociative mode in NF3 and SiH4
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Дата
2007-10
Назва журналу
Номер ISSN
Назва тому
Видавець
JOURNAL OF PHYSICS D: APPLIED PHYSICS
Анотація
This paper shows that the rf capacitive discharge in NF3 and SiH4 can burn
in three possible modes: weak-current α-mode, strong-current γ -mode and
dissociative δ -mode. This new dissociative δ-mode is characterized by a high dissociation degree of gas molecules (actually up to 100% in NF3 and up to 70% in SiH4), higher resistivity and a large discharge current. On increasing rf voltage first we may observe a weak-current α-mode (at low NF3 pressure the α-mode is absent). At rather high rf voltage when a
sufficiently large number of high energy electrons appear in the discharge, an intense dissociation of gas molecules via electron impact begins, and the
discharge experiences a transition to the dissociative δ-mode. The dissociation products of NF3 and SiH4 molecules possess lower ionization potentials, and they form an easily ionized admixture to the main gas. At higher rf voltages when near-electrode sheaths are broken down, the discharge experiences a transition to the strong-current γ -mode.
Опис
Ключові слова
plasma physics, gas discharges
Бібліографічний опис
J. Phys. D: Appl. Phys. 40 (2007) 6631–6640