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Please use this identifier to cite or link to this item: http://dspace.univer.kharkov.ua/handle/123456789/1700

Название: Rf discharge dissociative mode in NF3 and SiH4
Авторы: Lisovskiy, V.
Booth, Jean-Paul
Landry, K.
Douai, D.
Cassagne, V.
Yegorenkov, V.
Ключевые слова: plasma physics
gas discharges
Issue Date: Oct-2007
Издатель: JOURNAL OF PHYSICS D: APPLIED PHYSICS
Библиографическое описание: J. Phys. D: Appl. Phys. 40 (2007) 6631–6640
Серия/номер: ;doi:10.1088/0022-3727/40/21/023
Краткий осмотр (реферат): This paper shows that the rf capacitive discharge in NF3 and SiH4 can burn in three possible modes: weak-current α-mode, strong-current γ -mode and dissociative δ -mode. This new dissociative δ-mode is characterized by a high dissociation degree of gas molecules (actually up to 100% in NF3 and up to 70% in SiH4), higher resistivity and a large discharge current. On increasing rf voltage first we may observe a weak-current α-mode (at low NF3 pressure the α-mode is absent). At rather high rf voltage when a sufficiently large number of high energy electrons appear in the discharge, an intense dissociation of gas molecules via electron impact begins, and the discharge experiences a transition to the dissociative δ-mode. The dissociation products of NF3 and SiH4 molecules possess lower ionization potentials, and they form an easily ionized admixture to the main gas. At higher rf voltages when near-electrode sheaths are broken down, the discharge experiences a transition to the strong-current γ -mode.
URI: http://dspace.univer.kharkov.ua/handle/123456789/1700
Appears in Collections:Наукові роботи. Фізико-технічний факультет

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