Electronographic investigation of the temperature effect on the phase formation in thin double-layer Ni/GaAs films
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Дата
1998
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Анотація
The results of an electronographic investigation of the Ni—GaAs double-layer films phase composition depending on temperature at condensation of Ni at GaAs are presented. The structure and number of the phases being formed have been shown to depend both on ther-mal conditions at interaction of the Ni and GaAs layers and on the Ni to GaAs layer mass ratio: mNi//mGaAs = (0.5; 1.2).
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Thin films, gallium arsenide, crystal structure, Research Subject Categories::NATURAL SCIENCES::Physics::Condensed matter physics::Surfaces and interfaces
Бібліографічний опис
Gladkikh N.T., Grebennik I.P., Dukarov S.V. Electronographic investigation of the temperature effect on the phase formation in thin double-layer Ni/GaAs films // Met. Phys. Adv. Tech. – 1998. – V. 17. – P. 725–734.